Transistor NPN Si 2SC2329

TRANSISTOR NPN DE PUISSANCE RF

Fabricant: NEC
Appellation fabricant: 2SC2329 

Type Designator: 2SC2329
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 7.5 W
Maximum Collector-Base Voltage |Vcb|: 38 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 175 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO39