Transistor P MOSFET RFD8P05

TRANSISTOR MOSFET CANAL P

Fabricant: INTERSIL
Appellation fabricant: RFD8P05 
Composant neuf

Type Designator: RFD8P05
Marking Code: D8P05
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 48 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 80 nC
Rise Time (tr): 30 nS
Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm
Package: TO251AA