Transistor NPN Si BFX55

TRANSISTOR NPN TO5

Fabricant: SIEMENS
Appellation fabricant: BFX 55 
Composant neuf

Type Designator: BFX55
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO5